ABB’s high power IGBT ‘HiPak module’ semiconductors have recently been revised to incorporate a number of benefits. These include:
- Improved reliability
- Enhanced processes
- Better package design.
The product quality and reliability have been improved by changing the bonded internal auxiliary connection from substrate to gate-print, re-designing the power terminal footer with spacers, changing the emitter side bonding parameters and layout, and integrating a discrete substrate resistor into the IGBT chip. The power cycling for bond-wires has improved from 500kcycles to 2Mcycles.
The revised single IGBT and dual diode modules include: 5SNA 0400J650100, 5SNA 0500J650300, 5SNA 0800J450300 and 5SNA 0650J450300, 5SLD 0600J6, 5SLD 0650J450300, 5SLD 1200J450350 and 5SLD 1200J330100. Shipping is from July 2016.
For more information, please contact us.
