SPT+ and Trench technologies combined
Usually, ABB’s Enhanced Planar (SPT+) technology competes with Trench cell IGBTs. However, ABB has combined the two to create a new generation of IGBT cell technology. The results are (1) the Enhanced Trench TSPT+ and (2) the Enhanced Planar SPT++ IGBTs. These devices represent the latest generation of IGBT cell technology, further loss reduction and, as a result, the possibility to increase current density.
These new HiPaks are expected to be released for sale during Q4 of 2018.
SPT++ 6500V 1000A HiPak
The SPT++ technology boosts the rating of the 6500V IGBT from 750A to 1000A and allows the IGBT module to function with an operating junction temperature of 150°C, with unrivalled robustness. For improved performance in regenerative mode, the diode area has been increased by 20%. This allows a system designer to use a smaller module or eliminate the parallel connection of modules.
TSPT+ 3300V 1800A HiPak
The combination of the very low loss and ultra-rugged SPT+ technology with the latest trench cell design further reduces losses and increases current density. The new device allows for a 20% increase in rated current compared with the previous 1500A generation in the same package. In addition, the new 1800A 3300V HiPak is designed to cope with increased stray inductance.
ABB is a global leader in manufacturing high-power semiconductors with over 100 years of experience in power electronics. These key components are found at the heart of many leading ABB technologies, such as high voltage direct current (HVDC) transmission systems, flexible alternating current transmission systems (FACTS) and variable speed drives. Power semiconductors are also central to the development of a more reliable, smarter and greener grid.
ABB’s vast range of power semiconductors will be expanded with the following new products for:
- Power transmission and distribution
- Renewable energy
- Industrial markets.