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Low Inductance SiC Power Modules for High Speed Switching

SP6LI SiC SIlicon Carbide Power Module

Microsemi’s new SP6LI low inductance modules are Silicon Carbide (SiC) MOSFET power modules. The range’s very low internal inductance supports optimised designs for high speed switch mode power conversion.

SP6LI SiC SIlicon Carbide Power Module

The SP6LI range is ideal for high power applications where high efficiency is needed, such as:

  • Industrial drives
  • Automotive traction
  • DC/DC conversion
  • Battery charging.

The product range offers phase leg topology from 700 V to 1200 V, and up to 300 A.


  • Very low stray inductance
  • Internal thermistor for temperature monitoring
  • AlN substrate for improved thermal performance

SiC Development Kit Solution

The SP6LI modules are ideal for use with AgileSwitch (part of Microchip) augmented switching SiC gate drivers. Microchip has released Accelerated SiC Development Kits for the range, each complete with an SP6LI power module, gate driver/series core and module adaptor board. System parameters are fully adjustable using the Intelligent Configuration Tool (ICT) and a device programmer also included in the kit.

Useful links

SP6LI Power Modules

SiC Gate Drivers

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Telephone +44 (0)1793 784389 or email: sales@ppm.co.uk