PPM Power has expanded its range of Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) power modules. The new power modules cover different topologies including half bridge, six pack, H-bridge, boost chopper and buck chopper.
The voltages range from 700 V to 1200 V and have a current rating of between 44 A and 584 A and are ideal for applications producing up to 700 kW or those that require higher switching frequency and efficiency.
The SiC MOSFETs have robust short circuit protection as well as being designed with higher repetitive unclamped inductive switching (UIS) capability, which makes failure less likely and your design more robust. They are qualified to the AEC-Q101 standard, meaning that the components have undergone stress tests and can operate between -40°C and +125°C.
The power modules come in several different package types which are SOT-227, SP1, SP3F, SP6-P and SP6C. The modules come with smart gate drivers from AgileSwitch for faster adoption and using the configuration tool, it is easy to configure the parameters and program the on-board micro controller.
The Microsemi SiC MOSFET power modules are suitable for use in industrial applications where high efficiency is required such as:
- Industrial motor drives
- High power electric vehicle battery charging and traction
- DC/DC conversion
- Auxiliary power supplies.
The power modules offer 10 times lower failure-in-time (FIT) rate than the Si IGBTs and are smaller and lighter designs. They enhance power conversion and minimise power losses. When used in electric vehicle charging, these devices help lessen battery charging cycles and reduce the cost of battery packs.