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Silicon Carbide MOSFET & Diodes

Advantages:

  • 4.5 V Vgs(th) for noise rejection
  • RDS(on) stable up to 150°C
  • Compact for higher power density

Applications:

  • Motor drives
  • Power supplies and inverters
  • Induction heating

SanRex Silicon Carbide (SiC) MOSFET modules have the equivalent specifications of 300 A rated modules, whilst having a volume of less than half that of competitor devices.

The die integrates a Schottky free-wheeling diode in a single device. This delivers a low profile and compact package. The modules offer 4.5 V typical threshold voltage for noise rejection. This helps to increase system reliability even under high frequency operation.

  • SanRex SiC Graph

The new, durable module in a 99 x 33 x 14 mm package has top and bottom die soldering and transfer mould technologies, instead of wire bonding. This technology is robust, offering three times greater thermal cycling capability than standard industry packages. The modules are guaranteed for > 30,000 cycles at 50 – 150°C test conditions.

Our technical sales team can help you select the right device for your application. Call us on +44 (0)1793 784389 to discuss your requirement.

SiC MOSFET Modules

Product NumberIdVdssVgs(th)Rds(on) Vgs=20VVsd Vgs=-5V
FCA100AC120100A1200V4.5V6.8mΩ2.7V
FCA150AC120150A1200V4.5V4.1mΩ2.7V
TBC100A1700V4.5V12mΩTBC
FCA150AC170150A1700V4.5V6mΩTBC

Silicon Carbide Schottky Barrier Diode Modules

IfVrrmVf
100A1200V1.65V
150A1200V1.65V

Datasheets

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SanRex FCA150AC120

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SanRex FCA100AC120

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SiC-Comparison Data

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More Information?

Telephone +44 (0)1793 784389 or email: sales@ppm.co.uk