The die integrates a Schottky free-wheeling diode in a single device. This delivers a low profile and compact package. The modules offer 4.5 V typical threshold voltage for noise rejection. This helps to increase system reliability even under high frequency operation.
The new, durable module in a 99 x 33 x 14 mm package has top and bottom die soldering and transfer mould technologies, instead of wire bonding. This technology is robust, offering three times greater thermal cycling capability than standard industry packages. The modules are guaranteed for > 30,000 cycles at 50 – 150°C test conditions.
Our technical sales team can help you select the right device for your application. Call us on +44 (0)1793 784389 to discuss your requirement.
SiC MOSFET Modules
Product Number | Id | Vdss | Vgs(th) | Rds(on) Vgs=20V | Vsd Vgs=-5V |
---|---|---|---|---|---|
FCA100AC120 | 100A | 1200V | 4.5V | 6.8mΩ | 2.7V |
FCA150AC120 | 150A | 1200V | 4.5V | 4.1mΩ | 2.7V |
TBC | 100A | 1700V | 4.5V | 12mΩ | TBC |
FCA150AC170 | 150A | 1700V | 4.5V | 6mΩ | TBC |
Silicon Carbide Schottky Barrier Diode Modules
If | Vrrm | Vf |
---|---|---|
100A | 1200V | 1.65V |
150A | 1200V | 1.65V |