Typical lead times for Hitachi’s range of IGBT, Silicon Carbide (SiC) MOSFET and diode modules are 6-8 weeks. This makes them ideal for the quick set-up of prototypes for testing or use as a second source for existing systems.
IGBT and Diode Modules
IGBT and diode modules are available from 1200 to 6500 V, in standard packages allowing drop-in replacement. The new 1200 V LoPak module is available in an upgraded package to complement the existing 1700 V modules, and enables a faster time-to-market process and reduces disruption of manufacturing lines.
Diode and Thyristor Modules
60Pak diode and thyristor modules feature high performance, reliability and increased overload capability. The modules are offered in a standard industrial housing, with mountings compatible with the existing 60mm module market.
SiC Phase-Leg Automotive Modules
RoadPak SiC modules offer advantages in vehicle operation, with a high current capability in a compact package. The design is optimised for low stray inductance and excellent thermal performance, with typical applications including automotive and light commercial vehicles, aviation, renewable energy and battery charging.
Order Prototypes
Speak to one of our technical engineers for support with your design or help finding alternative products.
Useful Links
IGBT and diode modules
Diode and thyristor modules
SiC phase-leg automotive modules
ABB Power Grids becomes Hitachi Energy
